Speaker
Description
In this study, polyaniline thin films with thickness of approximately 100 nm were spin-coated on a silicon substrate. The films were then irradiated at normal incidence and room temperature by 150 keV Ar+ ions to fluences ranging from 1 × 10^12 to 5 × 10^16 ions/cm2. According to the Monte Carlo simulation code, Stopping and Range of Ions in Matter (SRIM), the approximate penetration depth of the Ar+ ions in the thin films was found to be 279 nm. The surface morphology and roughness of the irradiated films was investigated by atomic force microscopy (AFM), while the optical properties and bandgap determination of the thin films were investigated by ultraviolet-visible spectrophotometry (UV–Vis). Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA) were used to study the effects of irradiation on the film thickness and compositional changes. AFM analysis showed that the roughness of the films decreases from about 33 nm to 19 nm as the ion fluence increases. The optical band gap of PANI film also decreased from 1,9 eV at 1 × 10^12 ions/cm2 to 1,4 eV at 5 × 10^16 ions/cm2 signifying the presence of new defect states within the bandgap as fluence increases. RBS results showed that there is a decrease of the thickness with increasing fluence while ERDA showed a decrease in hydrogen atoms of the film.
Apply to be considered for a student ; award (Yes / No)?
Yes
Level for award;(Hons, MSc, PhD, N/A)?
MSc
