Speaker
Apply to be<br> considered for a student <br> award (Yes / No)?
yes
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
yes
Main supervisor (name and email)<br>and his / her institution
Dr Diale M. mmantsae.Diale@up.ac.za (University of Pretoria)
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
MSc
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
yes
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
We have investigated by deep level transient spectroscopy (DLTS) the defects introduced in ZnO during electron beam exposure (EBE). In EBE, the samples were exposed to e-beam conditions, without metal deposition prior to Pd Schottky barrier diodes deposited by resistive evaporation. Melt grown ZnO contains three prominent defects, E1 at EC-120 meV, E3 at EC-300 meV and E4 at EC-690 meV. After the EBE a number of new defects were introduced that were not previously observed after electron beam deposition (EBD). The EBE-induced defects were caused by particles that were implanted during the EBE process and diffused deeper into the ZnO. There was not enough energy available to generate Frenkel pairs, thus the discrete breathers mechanism is required to transfer energy deep into the material to generate E-centers.
