Speaker
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
MSc
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
Yes
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
Main supervisor (name and email)<br>and his / her institution
Mmantsae Moche Diale mmantsae.diale@up.ac.za University of Pretoria
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
Gold Schottky diodes were fabricated on n-type GaAs with a free carrier density of 1E15. The diodes had excellent rectification properties with an ideality factor of 1.03 signifying the dominance of the thermionic emission process in charge transport across the barrier. The diodes were irradiated with alpha particles up to a fluence of 2.56×〖10〗^10 〖cm〗^2. Deep level transient spectroscopy (DLTS) performed on these contacts in the 15-300K range revealed the prominent well known radiation induced defects E1-E3. Laplace deep level spectroscopy split the E3 defect into two components, revealing the metastable E3 component with an activation enthalpy of 0.38eV. Current-voltage (I-V) and Capacitance-voltage (C-V) measurements revealed degraded diode characteristics after irradiation, with the reverse saturation leakage current and the free carrier density being the most susceptible.
