7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

The use of diffusion barriers to control first phase formation in solid state reactions

8 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.303
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster1


Mrs Hameda Abrass (University of Pretoria)

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Main supervisor (name and email)<br>and his / her institution

Prof Chris Theron, university of Pretoria. chris.theron@up.ac.za

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

Concentration controlled phase selection in solid state reaction has been proposed as a model to interpret first phase formation occurring at solid interfaces. This is done in the context of the effective heat of formation model. The results of solid state reactions between a thin film of Co and single crystalline Si substrates are presented. Various thicknesses of the same composition diffusion barrier (Fe90Zr10) were deposited on a Si substrate in a molecular beam epitaxial growth chamber. The formation of the various Co- silicides found at diffusion barrier interlayer's are interpreted in terms of the reduced flux of reactant atoms at the reaction interface. The reduced fluxes are due to the different thicknesses of the diffusion barriers. Samples were annealed for times ranging from 5 to 24 hrs at temperatures ranging from 350 - 800°C and the phase formation sequence was characterized by Rutherford backscattering spectrometry, scanning electron microscopy and X-ray diffraction.

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Primary author

Mrs Hameda Abrass (University of Pretoria)


Prof. Chris Theron (University of Pretoria)

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