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Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
Recrystallization of an amorphous layer of GaAs on a crystalline GaAs substrate formed by argon-ion bombardment at 100 keV has been investigated using surface Brillouin scattering and Raman spectroscopy. Two samples were implanted at doses of 1×1015 ions/cm2 and at 2×1014 ions/cm2, both at a temperature of ~77 K. Surface Brillouin scattering (SBS) and Raman scattering have been used to study the isochronal annealing of these two samples. It has been found that the stiffening of the elastic constants as measured with SBS begins at around 120 oC and reaches a maximum at 260 oC for both samples. Using the Raman technique, it has been observed that the recrystallization of the higher dose implanted sample occurs at around 260 oC compared to 240 oC for the 2×1014 ions/cm2 implant. These measurements are compared to previous results obtained on implantations at temperatures of ~ 65oC.
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University of the Witwatersrand