7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Reactive DC sputter deposition and charactersation of AlN thin films

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.282
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Mr Thembinkosi Goodman Nyawo (University of Zululand)

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Thin films of Aluminium Nitride (AlN) have been deposited on Si wafers using RF reactive sputter deposition in a nitrogen ambient. AlN is a wide bandgap semiconductor suitable for deep ultraviolet optoelectronics. The films have been characterized using Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS), Scanning Electron Microscopy (SEM) and the oxygen content has been profiled using resonant RBS. The films were found to be smooth and uniform and adhere well to the Si substrate.

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Primary author

Mr Thembinkosi Goodman Nyawo (University of Zululand)


Prof. Muzi Ndwandwe (University of Zululand) Ms Nelisiwe Chonco (University of Zululand) Mr Thuba Masango (University of Zululand) Mr Thulani Thethwayo (University of Zululand)

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