Speaker
Mr
Thembinkosi Goodman Nyawo
(University of Zululand)
Level for award<br> (Hons, MSc, <br> PhD)?
N/A
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
Thin films of Aluminium Nitride (AlN) have been deposited on Si wafers using RF reactive sputter deposition in a nitrogen ambient. AlN is a wide bandgap semiconductor suitable for deep ultraviolet optoelectronics. The films have been characterized using Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS), Scanning Electron Microscopy (SEM) and the oxygen content has been profiled using resonant RBS. The films were found to be smooth and uniform and adhere well to the Si substrate.
Apply to be<br> considered for a student <br> award (Yes / No)?
No
Main supervisor (name and email)<br>and his / her institution
N/A
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Primary author
Mr
Thembinkosi Goodman Nyawo
(University of Zululand)
Co-authors
Prof.
Muzi Ndwandwe
(University of Zululand)
Ms
Nelisiwe Chonco
(University of Zululand)
Mr
Thuba Masango
(University of Zululand)
Mr
Thulani Thethwayo
(University of Zululand)
