7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Silicide formation in Pd-Si and Pd-SiC diffusion couples

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.382
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Mr Eric Njoroge (University of Pretoria)

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Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

The reactions between Pd thin films deposited by resistive evaporation on Si and 6H-SiC substrates have been investigated by Raman, Rutherford backscattering spectrometry (RBS) and glancing-incidence X-ray diffraction (GIXRD). The deposited films were subsequently annealed from 100 to 800°C. At room temperature, no silicides were detected to have formed in either couple. After annealing, a reaction zone was formed between Pd and the two substrates. Pd starts to react with Si at 200°C while at 400°C with SiC. The initial phase to form in Pd-Si couples was Pd2Si and in Pd-SiC samples were Pd4Si and Pd9Si2. These initial phases formed were theoretically predicted by the binary and ternary effective heat of formation (EHF) models and the experimental results corroborate this.

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Main supervisor (name and email)<br>and his / her institution

Chris Theron

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Primary author

Mr Eric Njoroge (University of Pretoria)


Prof. Chris Theron (University of Pretoria) Ms Helga Danga (University of Pretoria) Ms Jeaneth Thokozile Kabini (Univerity of Pretoria) Prof. Johan Malherbe (University of Pretoria)

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