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Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
Tungsten oxide film was reactively-sputtered on alumina substrate with Pt-contacts from a pure W target and argon/oxygen-plasma. The synthesized and annealed tungsten oxide was characterized with XRD, XPS, Raman spectroscopy, UV/Vis spectroscopy and Resistance as a function of Temperature, and found to be stoichiometric triclinic phase tungsten trioxide. The pure film was used to sense ppm concentrations of nitrogen dioxide and ammonia at room-temperature and 100oC. At 100oC, The sensitivity of the film towards nitrogen dioxide increased, and decreased significantly towards ammonia. This was due to tungsten trioxide being an n-type metal-oxide semiconductor which preferred the reaction with the oxidizing gas over the reducing gas.
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Main supervisor (name and email)<br>and his / her institution
Dr. Bonex W. Mwakikunga