7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Electrical properties of Hg/n-Si (MS) and Hg/PO3/n-Si (MIS) Schottky Diodes

10 Jul 2014, 10:20
D Les 201

D Les 201

Oral Presentation Track A - Division for Physics of Condensed Matter and Materials DPCMM1


Mr Fred Joe Nambala (University of Zambia)

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

Metal-semiconductor (MS) and metal- insulator-semiconductor (MIS) Schottky barrier diodes were studies using 4-cyanobenzyl phosphonate (PO3) monolayer. The insulator was deposited on n-Si(111) through a chemical process. Electrical parameters of the Hg/n-Si(111), MS and Hg/PO3/n-Si, MIS contacts were obtained from the forward and the reverse bias current-voltage (I-V) and capacitance-voltage (C-V) measurements performed using a mercury (Hg) probe at room temperature. Experimental results show no rectification behavior for the MS and rectification for MIS diodes. The ideality factor (n) and the zero-bias barrier height (ФBo) were determined as 5 and 0.44 eV for the MS. In addition, the values of n and ФBo for MIS were determined as 1.2 and 0.68 eV using I-V measurements and then the ФBo of 0.64 eV was measured with C-V. C-V measurements for the MS diodes did not yield results due to low barrier height.

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Main supervisor (name and email)<br>and his / her institution

Mmantsae Diale, mmantsae.diale@up.ac.za. University of Pretoria, South Africa.

Primary author

Mr Fred Joe Nambala (University of Zambia)


Prof. David Cahen (Weizmann Insitute of Science) Dr Fred Diale (University of Pretoria)

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