7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Temperature-dependent barrier characteristics of Pd/ZnO Schottky barrier diodes

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.406
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Mr Meehleketo Advice Mayimele (University of Pretoria)

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Main supervisor (name and email)<br>and his / her institution

M. Diale. mmantsae.diale@up.ac.za
Department of Physics, University of Pretoria, Pretoria 0002, South Africa

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Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

The current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes were measured in the 30-370K temperature range and have been interpreted based on the assumption of a Gaussian distribution of the barrier heights due to the barrier inhomogeneities that prevail at the interface. It shows that the occurrence of a Gaussian distribution of the barrier height is responsible for the decrease of the apparent barrier height , increase of the ideality factor n and non-linearity in the activation energy plot at low temperature. The inhomogeneities are considered to have a Gaussian distribution mean barrier height of = 0.985 eV and a standard deviation of =0.022 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained as 0.883 and 0.541 A K-2cm-2 , respectively by means of the modified Richardson plot. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on Pd/ZnO can be successfully explained based on thermionic emission mechanism with a Gaussian distribution of the barrier heights.

Primary author

Mr Meehleketo Advice Mayimele (University of Pretoria)


Prof. Danie Auret (University of Pretoria) Dr Mmantsae Diale (University of Pretoria) Mr Wilbert Mtangi (University of Pretoria)

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