7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Temperature-dependent barrier characteristics of Pd/ZnO Schottky barrier diodes

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.406
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2

Speaker

Mr Meehleketo Advice Mayimele (University of Pretoria)

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

No

Main supervisor (name and email)<br>and his / her institution

M. Diale. mmantsae.diale@up.ac.za
Department of Physics, University of Pretoria, Pretoria 0002, South Africa

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

Yes

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

MSc

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

The current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes were measured in the 30-370K temperature range and have been interpreted based on the assumption of a Gaussian distribution of the barrier heights due to the barrier inhomogeneities that prevail at the interface. It shows that the occurrence of a Gaussian distribution of the barrier height is responsible for the decrease of the apparent barrier height , increase of the ideality factor n and non-linearity in the activation energy plot at low temperature. The inhomogeneities are considered to have a Gaussian distribution mean barrier height of = 0.985 eV and a standard deviation of =0.022 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained as 0.883 and 0.541 A K-2cm-2 , respectively by means of the modified Richardson plot. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on Pd/ZnO can be successfully explained based on thermionic emission mechanism with a Gaussian distribution of the barrier heights.

Primary author

Mr Meehleketo Advice Mayimele (University of Pretoria)

Co-authors

Prof. Danie Auret (University of Pretoria) Dr Mmantsae Diale (University of Pretoria) Mr Wilbert Mtangi (University of Pretoria)

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