7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Structural,Electrical and Electronic Properties of Diamond Like Carbon (DLC) and Cabon-Based Materials

8 Jul 2014, 10:20
20m
D Les 202

D Les 202

Oral Presentation Track A - Division for Physics of Condensed Matter and Materials DPCMM2

Speaker

Mr Wilfred mbiombi (University of the Witwatersrand)

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

yes

Main supervisor (name and email)<br>and his / her institution

Bhekumusa Mathe
Bhekumusa.Mathe@wits.ac.za

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

Msc

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

no

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

ABSTRACT

In this work, the structural and electronic properties of diverse diamond-like carbon (DLC) also known as hydrogenated amorphous carbon (a-C:H), silicon doped DLC (a-C:H:Si) thin films on (001)Si deposited by plasma enhanced chemical vapour deposition (PECVD) are studied under different applied bias voltages (100V<Vb<600V). Silicon doped with DLC thin films was attained by using tetramethysilane (TMS) as a precursor at different standard centimetre cube per minute (sccm). Nitrogen doping in amorphous carbon (a-C:Nx) thin films was achieved by pulsed laser deposition (PLD) process and studied their different properties. Different nitrogen concentration (at.%) of a-C:Nx thin films were deposited on silicon substrate using nitrogen as a precursor gas. The thicknesses of all thin films were ~15015 nm controlled and monitored during deposition process. Raman spectroscopy of these thin films was measured by using two different laser excitation wavelengths viz 488 nm and 647 nm respectively. The microstructure and electronic property of these samples were investigated by Raman spectroscopy and the electrical property was studied by current-voltage (I-V) characteristics. Finally, a correlation among the electrical properties, electronic properties and micro-structure properties were established based on their sp3 and sp2 concentration in the thin film structure.

Primary author

Mr Wilfred mbiombi (University of the Witwatersrand)

Co-authors

Dr Daniel Wamwangi (University of the Witwatersrand) Dr Mathe Bhekumusa (University of the Witwatersrand) Dr Rudoph Eramus (University of the Witwatersrand) Prof. Sekhar Ray (UNISA)

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