Main supervisor (name and email)<br>and his / her institution
Supervisor: Mr. PJ Janse van Rensburg
Institution: University of Pretoria
Apply to be<br> considered for a student <br> award (Yes / No)?
Level for award<br> (Hons, MSc, <br> PhD)?
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
In this project the Richardson constant (A) for metal-semiconductor contacts on 4H-SiC was investigated by means of current-voltage measurements as a function of temperature in the range of 300 K to 700 K. Multiple n-type 4H-SiC-based metal-semiconductor contacts, having an estimated carrier concentration of 3.70 x 1014 cm-3 were considered. The current-voltage-temperature (IVT) characteristics of Ni/4H-SiC and W/4H-SiC Schottky barrier diodes were studied, based on the thermionic emission model. The samples were prepared using various deposition techniques, (viz. Ni – resistive evaporation and electron-beam deposition (EBD); and W – RF sputtering and EBD) and diode parameters (such as ideality factor (η), Schottky barrier height (ФB), series resistance (Rs) and saturation current (Is)) obtained were compared and found to be strongly dependent on temperature. The Richardson constant for 4H-SiC obtained from the intercept of a least squares fit through the Arrhenius plot data resulted in 3.72 x 10-6 A.K-2.cm-2 for W and 5.41 A.K-2.cm-2 for Ni – both deposited via EBD; 2.63 x 10-3 A.K-2.cm-2 for Ni deposited resistively, and lastly 6.31 x 10-12 A.K-2.cm-2 for sputtered W. It was concluded that A is dependent on the metal contact as well as the type of deposition technique utilized for the Schottky metal contacts.