7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Characterization of Temperature Dependence of the Electron Capture Cross Section of E-Center in Sb-Doped Germanium

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.274
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Mr Ezekiel Omotoso (University of Pretoria)

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The temperature dependent capture cross section of the E-center in Ge after intentionally irradiating the sample by alpha particle has been investigated. Ohmic contact and Schottcky diodes were deposited of n-type Sb-doped Ge by resistive evaporation. DLTS measurements were made by high resolution Laplace DLTS. From an Arrhenius plot, we found that the thermal emission of the E-center had activation energy of (0.370±0.001) eV and an apparent capture cross section of 2.22×〖10〗^(-15) cm^2. For a constant filling pulse width, the height of the DLTS peak due to the E-centre increased with increasing temperature. This is the evidence that the E-center has a temperature activated capture cross section. The capture barrier energy and true capture cross section of Ge E-center have been determined to be (0.052±0.003) eV and (2.25±0.05)×〖10〗^(-17) cm^2 respectively

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Main supervisor (name and email)<br>and his / her institution

Prof. W. E. Meyer
University of Pretoria

Primary author

Mr Ezekiel Omotoso (University of Pretoria)


Prof. Danie Auret (University of Pretoria) Mr Phuti Ngoepe (University of Pretoria) Mr Sergei Coelho (UP) Prof. Walter Meyer (University of Pretoria)

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