Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
The temperature dependent capture cross section of the E-center in Ge after intentionally irradiating the sample by alpha particle has been investigated. Ohmic contact and Schottcky diodes were deposited of n-type Sb-doped Ge by resistive evaporation. DLTS measurements were made by high resolution Laplace DLTS. From an Arrhenius plot, we found that the thermal emission of the E-center had activation energy of (0.370±0.001) eV and an apparent capture cross section of 2.22×〖10〗^(-15) cm^2. For a constant filling pulse width, the height of the DLTS peak due to the E-centre increased with increasing temperature. This is the evidence that the E-center has a temperature activated capture cross section. The capture barrier energy and true capture cross section of Ge E-center have been determined to be (0.052±0.003) eV and (2.25±0.05)×〖10〗^(-17) cm^2 respectively
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Prof. W. E. Meyer
University of Pretoria