7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Investigation of the migration behaviour of Strontium ion implanted in Silicon Carbide

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.272
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Ms Thabsile Thabethe (University of Pretoria)

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

The migration behaviour of strontium through single and poly crystalline SiC (6H-SiC and CVD-SiC) wafers was investigated using Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and Raman spectroscopy. A fluence of 1.153×10^16 cm^-2 of Sr ion was implanted into 6H-SiC wafer with an energy of 360 keV at room temperatures (RT = 23 °C). The change in average depth of the implantation Sr ion profile was determined by isochronal and isothermal annealing studies at temperatures up to 1400 °C. The strong influence of radiation damage on diffusion after room temperature implantations was observed in all cases during the initial annealing stages at 1000 °C. Recrystallization of the highly disordered crystal at this annealing temperature is taking place. Further diffusion took place as the annealing temperature was increased from 1000 to 1400 ºC. Annealing of the radiation damage and structural reconstruction was observed to be taking place at these annealing temperatures.

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Main supervisor (name and email)<br>and his / her institution

Prof J B Malherbe, Johan.Malherbe@up.ac.za, University of Pretoria

Primary author

Ms Thabsile Thabethe (University of Pretoria)

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