7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Growth of FeSi nanowires by Chemical Vapour Deposition for Gas Sensing Applications

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.190
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Dr Sibongiseni Thabethe (CSIR)

Main supervisor (name and email)<br>and his / her institution

Bonex Mwakikunga
Council for Scientic and Industrial Research

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

FeSi belongs to a class of narrow band gap semiconductors. It has been studied for more than 30 years because of its unusual properties such as its metal to insulator transition (MIT) at temperatures near 300 K [1,2]. We report on the synthesis of FeSi nanowires using chemical vapor deposition for gas sensing applications. Anhydrous FeCl3 powder was used as the precursor. N2 gas was used to carry the precursor vapors to the silicon substrates which were placed in a horizontal quartz tube furnace at a temperature of 1100oC. XRD and TEM results confirm that the nanowires are FeSi with a cubic crystal structure.

[1]J.R Szczech, S. Jin. Journal of Material Chemistry. 2010, 20, 1375-1382.
[2]S. Jang, Y. Lee, S. Kim, J. Seo, D. Kim, Material Letters, 2011, 65, 2979-2981.

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Primary author


Prof. Chris Arendse (University of the Western Cape)

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