Speaker
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Abstract content <br> (Max 300 words)
Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent rectification with twelve orders of magnitude between -2V and +2V. The ideality factor was obtained as1.05 which signifies the dominance of the thermionic emission process in charge transport across the barrier. Deep Level Transient Spectroscopy (DLTS) revealed the presence of four deep level defects in the 30 – 350 K temperature range. The diodes were then irradiated with 5.4 MeV alpha particles up to a fluence of 2.6 × 1010 cm-2. Current Voltage (I-V) and Capacitance Voltage (C-V) measurements revealed degraded diode characteristics after irradiation. DLTS revealed the presence of two more energy levels with activation enthalpies of 0.42 eV and 0.76 eV below the conduction band. These levels were however only realized after annealing the irradiated sample at 200 ˚C and they annealed out at 400 ˚C.
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
Level for award<br> (Hons, MSc, <br> PhD)?
MSc
Main supervisor (name and email)<br>and his / her institution
F. D Auret, danie.auret@up.ac.za, University of Pretoria
