SAIP2013

Ion Beam Modification of the Structure and Properties of Hexagonal Boron Nitride

10 Jul 2013, 16:00

20m

Oral Presentation Track F - Applied Physics Applied

Speaker

Ms Emily Aradi (University of the Witwatersrand)

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

Yes

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

Yes

Main supervisor (name and email)<br>and his / her institution

Trevor E Derry
Trevor.Derry@wits.ac.za
University of the Witwatersrand

Abstract content <br> &nbsp; (Max 300 words)

Cubic boron nitride (c-BN) nanocrystals have been produced by boron ion implantation of hexagonal boron nitride (h-BN) at various fluences and implantation energies. The optimum fluence was found to be 5x10¹⁴ions/cm² at 150 keV. The presence of these nanoparticles was investigated using glazing angle XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR).
Glazing angle XRD pattern after implantation exhibited c-BN diffraction peaks with high intensity at the glazing angle of 3^o whose penetration depth corresponded to the implantation depth. After implantation, Fourier transfore Infrared spectroscopy indicated a peak at 1090 cm^-1 which corresponded to the vibrational mode for nc-BN.

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

PhD