8-12 July 2013
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=13&confId=32"><font color=#ff0000>SAIP2013 PROCEEDINGS AVAILABLE</font></a>

Static electrical characteristics of silicon diodes at different temperatures: For radiation-hard detectors.

9 Jul 2013, 17:40
Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster1


Dr Sabata Moloi (University of South Africa)

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Abstract content <br> &nbsp; (Max 300 words)

In this work the diodes were fabricated on undoped and on gold-doped p-type silicon. The diodes were characterised by Current-voltage measurements in the temperature range of 283 – 333 K. The temperature dependence of the saturation current, the Schottky barrier height and the ideality factor was investigated. The main indication is that effects due to the temperature are more pronounced on the undoped p-type silicon diodes than on the gold-doped p-type silicon diodes. The obtained results are interpreted in terms of defect levels that are induced by gold in the energy gap of silicon. These levels act mainly to recombine the thermal generated carriers and are responsible for the conversion of silicon from lifetime to relaxation material. The diodes fabricated from relaxation material are characterized by the Ohmic behaviour and high resistivity due to recombination of charge carriers by the defect levels. Properties of the relaxation diodes are not affected by the incident radiation. Thus, the diodes can be used to devise the radiation-hard detectors.

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Primary author

Dr Sabata Moloi (University of South Africa)

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