8-12 July 2013
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=13&confId=32"><font color=#ff0000>SAIP2013 PROCEEDINGS AVAILABLE</font></a>

Comparative analysis of fabricated Titanium Schottky doides on silicon and gold doped silicon

9 Jul 2013, 17:40
Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster1


Mr Fred Joe Nambala (University of Pretoria)

Abstract content <br> &nbsp; (Max 300 words)

Titanium (Ti) Schottky contacts were fabricated on (100) p-type silicon (p-Si). An Indium Garium (InGa) ohmic contact was deposited on the highly doped surface of the p-Si wafer. IV and CV measurements were conducted and results are presented. Also, detailed measurements of thin gold films fabricated by vacuum resistive deposition on the (111) n-type and (100) p-type silicon (Si) wafers are reported. The gold were diffused into Si at 1000 °C for times ranging from 15 minutes to 120 min. Diffusion profiles by Rutherford backscattering spectroscopy (RBS) are presented. Ti Schottky contacts were deposited on the gold doped (100) p-Si with an InGa ohmic contact for a diode sample. IV and CV were performed on this sample. A comparative analysis of above-mentioned samples is presented.

Keywords: Schottky, resistive deposition, diffusion.

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?


Main supervisor (name and email)<br>and his / her institution

Dr MM Diale.
University of Pretoria

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Primary author

Mr Fred Joe Nambala (University of Pretoria)

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