27 September 2010 to 1 October 2010
CSIR Convention Centre
Africa/Johannesburg timezone

Interface properties of O2 annealed Au/Ni/n-AlGaN and Ir/n-AlGaN Schottky barrier systems

Not scheduled
CSIR Convention Centre

CSIR Convention Centre

CSIR, Pretoria
Poster Track A - Condensed Matter Physics and Material Science


Mr Matshisa Legodi (University of Pretoria)


We systematically annealed Ni/Au and Ir Schottky contacts on Al0.35Ga0.65N in O2. Our Capacitance-Voltage-Frequency (C-V-f) measurements reveal the presence of anomalous peaks at 0.9V for Au/Ni/Al0.35Ga0.65N and at 0.8V and 1.2V for the Ir/Al0.35Ga0.65N contact system. The overall quality of both Schottky systems improves with O2 annealing up to 573K.

Primary author

Mr Matshisa Legodi (University of Pretoria)


Prof. Danie Auret (Physics Department) Dr Walter Meyer (Physics Department)

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