Speaker
Mr
Matshisa Legodi
(University of Pretoria)
Description
We systematically annealed Ni/Au and Ir Schottky contacts on Al0.35Ga0.65N in O2. Our Capacitance-Voltage-Frequency (C-V-f) measurements reveal the presence of anomalous peaks at 0.9V for Au/Ni/Al0.35Ga0.65N and at 0.8V and 1.2V for the Ir/Al0.35Ga0.65N contact system. The overall quality of both Schottky systems improves with O2 annealing up to 573K.
Primary author
Mr
Matshisa Legodi
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(Physics Department)
Dr
Walter Meyer
(Physics Department)
