27 September 2010 to 1 October 2010
CSIR Convention Centre
Africa/Johannesburg timezone

Ab-initio modelling of the electronic and annealing properties of low temperature irradiation-induced defects in silicon and germanium

Not scheduled
CSIR Convention Centre

CSIR Convention Centre

CSIR, Pretoria
Poster Track A - Condensed Matter Physics and Material Science


Dr Walter Meyer (University of Pretoria)


The electronic and annealing properties of primary radiation induced defects in Si have been studied by means of density functional theory (DFT) calculations using VASP. The results obtained for different functionals have been compared with each other, with results obtained by other groups and where data is available, to experimental values.

Primary author

Dr Walter Meyer (University of Pretoria)


Prof. Danie Auret (University of Pretoria) Mr Jacq Crous (University of Pretoria) Mr Jacques Pienaar (University of Pretoria) Mr Johan Janse van Rensburg (University of Pretoria) Prof. Nithaya Chetty (University of Pretoria)

Presentation Materials

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