Speaker
Dr
Walter Meyer
(University of Pretoria)
Description
The electronic and annealing properties of primary radiation induced defects in Si have been studied by means of density functional theory (DFT) calculations using VASP. The results obtained for different functionals have been compared with each other, with results obtained by other groups and where data is available, to experimental values.
Primary author
Dr
Walter Meyer
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(University of Pretoria)
Mr
Jacq Crous
(University of Pretoria)
Mr
Jacques Pienaar
(University of Pretoria)
Mr
Johan Janse van Rensburg
(University of Pretoria)
Prof.
Nithaya Chetty
(University of Pretoria)
