Speaker
Mr
Johan Janse van Rensburg
(University of Pretoria)
Description
Semiconductor materials have been irradiated with 1.6 MeV protons at a temperature of 25 K after which in situ electrical characterization was performed to study the electrical active defects created during the irradiation. High resolution Laplace-DLTS was used to determine activation energies, capture cross-sections, defect concentrations and defect annealing kinetics.
Primary author
Mr
Johan Janse van Rensburg
(University of Pretoria)
