Speaker
Mr
Sabata Moloi
(University of South Africa)
Description
Current-voltage measurements were carried out on the silicon Schottky diodes in the temperature range of 280–330 K. The results obtained were interpreted in terms of defect levels induced by metal impurities in the energy gap. These levels are responsible for the relaxation behavior of silicon. Properties of these relaxation diodes are not affected by the incident radiation; hence, the diodes are used to devise the radiation-hard detectors.
Primary author
Mr
Sabata Moloi
(University of South Africa)
