27 September 2010 to 1 October 2010
CSIR Convention Centre
Africa/Johannesburg timezone

Temperature dependence of current-voltage characteristics of p-silicon Schottky diodes for radiation-hard detectors.

Not scheduled
CSIR Convention Centre

CSIR Convention Centre

CSIR, Pretoria
Presentation Track A - Condensed Matter Physics and Material Science


Mr Sabata Moloi (University of South Africa)


Current-voltage measurements were carried out on the silicon Schottky diodes in the temperature range of 280–330 K. The results obtained were interpreted in terms of defect levels induced by metal impurities in the energy gap. These levels are responsible for the relaxation behavior of silicon. Properties of these relaxation diodes are not affected by the incident radiation; hence, the diodes are used to devise the radiation-hard detectors.

Primary author

Mr Sabata Moloi (University of South Africa)

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