Speaker
Mr
Senzo Miya
(Nelson Mandela Metropolitan University)
Description
InAs/GaInSb strained layer superlattice structures were discovered to have the same detectivities as HgCdTe ternary alloys of the same threshold energy at room temperature. This makes these superlattices suitable replacements for HgCdTe, which presents some technological difficulties. In this paper the optical and structural properties of GaInSb and GaInSb/GaSb quantum wells grown by metal-organic vapour phase epitaxy (MOVPE) are discussed.
Primary author
Mr
Senzo Miya
(Nelson Mandela Metropolitan University)
Co-authors
Prof.
Johannes Reinhardt Botha
(Nelson Mandela Metropolitan)
Dr
Viera Wagener
(Nelson Mandela Metropolitan University)
