27 September 2010 to 1 October 2010
CSIR Convention Centre
Africa/Johannesburg timezone

Comparison of two models for field enhanced emission through phonon assisted tunnelling using DLTS measurements

Not scheduled
CSIR Convention Centre

CSIR Convention Centre

CSIR, Pretoria
Poster Track A - Condensed Matter Physics and Material Science


Mr Jacques Pienaar (University of Pretoria)


Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. Nonlinear fits to the models of Pons & Makram-Ebeid (1979) and Ganichev & Prettl (1997) which describe emission due to phonon assisted tunneling were obtained. The model of Pons & Makram-Ebeid predicted the measured emission rate more accurately than Ganichev & Prettl. Both models predicted a transition in the defect from a state of weak electron-phonon coupling to a state of strong electron-phonon coupling. Both models agree on the energy level of the defect and the apparent capture cross section.

Primary author

Mr Jacques Pienaar (University of Pretoria)


Prof. Danie Auret (University of Pretoria) Dr Walter Meyer (University of Pretoria)

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