27 September 2010 to 1 October 2010
CSIR Convention Centre
Africa/Johannesburg timezone

Comparison of two models for field enhanced emission through phonon assisted tunnelling using DLTS measurements

Not scheduled
CSIR Convention Centre

CSIR Convention Centre

CSIR, Pretoria
Poster Track A - Condensed Matter Physics and Material Science

Speaker

Mr Jacques Pienaar (University of Pretoria)

Description

Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. Nonlinear fits to the models of Pons & Makram-Ebeid (1979) and Ganichev & Prettl (1997) which describe emission due to phonon assisted tunneling were obtained. The model of Pons & Makram-Ebeid predicted the measured emission rate more accurately than Ganichev & Prettl. Both models predicted a transition in the defect from a state of weak electron-phonon coupling to a state of strong electron-phonon coupling. Both models agree on the energy level of the defect and the apparent capture cross section.

Primary author

Mr Jacques Pienaar (University of Pretoria)

Co-authors

Prof. Danie Auret (University of Pretoria) Dr Walter Meyer (University of Pretoria)

Presentation Materials

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