Speaker
Mr
Jacques Pienaar
(University of Pretoria)
Description
Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. Nonlinear fits to the models of Pons & Makram-Ebeid (1979) and Ganichev & Prettl (1997) which describe emission due to phonon assisted tunneling were obtained. The model of Pons & Makram-Ebeid predicted the measured emission rate more accurately than Ganichev & Prettl. Both models predicted a transition in the defect from a state of weak electron-phonon coupling to a state of strong electron-phonon coupling. Both models agree on the energy level of the defect and the apparent capture cross section.
Primary author
Mr
Jacques Pienaar
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(University of Pretoria)
Dr
Walter Meyer
(University of Pretoria)
