27 September 2010 to 1 October 2010
CSIR Convention Centre
Africa/Johannesburg timezone

Electrical characterization of ruthenium and Iridium Schottky contacts on n-Ge (100)

Not scheduled
CSIR Convention Centre

CSIR Convention Centre

CSIR, Pretoria
Poster Track A - Condensed Matter Physics and Material Science


Mr Albert Chawanda (University of Pretoria)


Ruthenium (Ru) and Iridium (Ir) Schottky barrier diodes were electron beam deposited on (100) n-type germanium. Electrical characterization of these contacts using current-voltage and capacitance-voltage measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky contacts can be attributed to the combined effects of interfacial reactions and phase transition during the annealing process.

Primary author

Mr Albert Chawanda (University of Pretoria)


Dr C Nyamhere (Nelson Mandela Metropolitan University) Prof. F.D Auret (University of Pretoria) Dr J.M. Nel (University of Pretoria) Dr M Diale (Univeresity of Pretoria) Mr S.M.M Coelho (University of Pretoria) Mr W Mtangi (University of Pretoria)

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