Speaker
Description
The gas sensing performance of a material partly depends on its defect property, especially the oxygen vacancy (VO) content [1]. The trace amounts of common impurities such as Cr3+ and N in Ga2O3 nanostructures significantly influence their defect-emission profiles [2,3]. In this work, we investigated the effect of unintentionally doped Cr3+ and N defects in conjunction with the intrinsic donor (VO) and acceptor (VGa) defects on the gas sensing performance of β-Ga2O3 nanorods. The photoluminescence and gas sensing results demonstrate a significant influence on the response/recovery times from the unintentionally doped Cr3+ and N defects in β-Ga2O3. Fast response times are key in rapid detection of toxic gases such as CO and quick recovery is important for reusability of the sensing material.
Keywords: Ga2O3; intrinsic defects; oxygen/gallium vacancies; gas sensing.
References
[1] M. Al-Hashem, S. Akbar, P. Morris, Role of oxygen vacancies in nanostructured metal-oxide gas sensors: A review, Sens. Actuators, B Chem. 301 (2019) 126845.
[2] G. Pozina, M. Forsberg, M.A. Kaliteevski, C. Hemmingsson, Emission properties of Ga2O3 nano-flakes: Effect of excitation density, Sci. Rep. 7 (2017) 1–8.
[3] A. Luchechko, V. Vasyltsiv, L. Kostyk, O. Tsvetkova, B. Pavlyk, The effect of Cr3+ and Mg2+ impurities on thermoluminescence and deep traps in β-Ga2O3 crystals, ECS J. Solid State Sci. Technol. 9 (2020) 045008.
Level for award;(Hons, MSc, PhD, N/A)?
PhD
| Apply to be considered for a student ; award (Yes / No)? | Yes |
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