Speaker
Mr
Lehlohonolo Lisema
(School of Physics, University of Witwatersrand, Johannesburg 2050, South Africa)
Description
Boron Nitride (BN) nanotubes were grown on Silicon (Si) substrates using chemical vapor deposition at temperatures ranging from 900 to 1100 °C. Ion implantations were carried out with boron (B+) ions at energies of 150 keV and fluences of 1x10^14 and 5 x10^14ions/cm^2. Raman analysis revealed a peak at 1367/cm, which is an indication of the sp^2 hybridized BN planar bonding attributed to the high frequency mode for the hBN peak, but which is more clearly characterized at 1100 °C. The glancing incidence X-ray diffraction (GIXRD) analysis revealed a well-defined peak at angles of 51-57°, indicating the hBN (004) peak. SEM images show BN nanotubes and BN nano particles of various shapes and sizes.
Level for award;(Hons, MSc, PhD, N/A)?
PhD
| Apply to be considered for a student ; award (Yes / No)? | Yes |
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Primary author
Mr
Lehlohonolo Lisema
(School of Physics, University of Witwatersrand, Johannesburg 2050, South Africa)
Co-authors
Mr
Trevor Derry
(School of Physics, University of Witwatersrand, Johannesburg 2050, South Africa)
Dr
Morgan Madhuku
(iThemba LABS (Gauteng), Private Bag 11, P.O. Wits, Johannesburg 2050, South Africa)
Prof.
Rudolph Erasmus
(rudolph.erasmus@wits.ac.za )
Mr
Adam Shnier
(School of Chemistry, University of Witwatersrand, Johannesburg 2050, South Africa and DSI-NRF Centre of Excellence in Strong Materials (DSI-NRF CoE-SM). )
Prof.
Daniel Wamwangi
(School of Physics, University of Witwatersrand, Johannesburg 2050, South Africa)
Prof.
David G Billing
(School of Chemistry, University of Witwatersrand, Johannesburg 2050, South Africa)
