1-8 July 2022
Virtual Conference
Africa/Johannesburg timezone
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Characterization of defects in Ar+ implanted ZnO semiconductor using positron annihilation technique.

5 Jul 2022, 11:30
15m
Zoom Platform (Virtual Conference)

Zoom Platform

Virtual Conference

Oral Presentation Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials

Speaker

Mr Musawenkosi Khulu (University of Zululand)

Description

Defects investigations were carried out in wurzite ZnO of space group P6_3mc, which were generated by 150 keV Ar+ ions during the implantation with fluencies from 10^4 to 10^16 cm-2. RBS technique was used to determine which elements are in the sample after implantation and X-ray diffraction was utilized to determine the presence of phase change or structural damage or both that might have occured during the implantation process. Local density approximation (LDA) and generalized gradient approximation (GGA) models were employed to theoretically determine the corresponding S-parameters., Thereafter, Doppler broadening of the annihilation centroids were obtained and S-parameters ranging from 0.35975 to 0.38995 at different fluences were then determined. Theoretical values agree with the experimental values. The theoretical positron lifetimes calculation through GGA suggests the formation of Zn+ vacancies.

Level for award;(Hons, MSc, PhD, N/A)?

MSc

Apply to be considered for a student ; award (Yes / No)? Yes

Primary author

Mr Musawenkosi Khulu (University of Zululand)

Co-authors

Prof. Thulani Jili (University of Zululand) Dr Morgan Madhuku (iThemba LABS) Dr Cebo Ndlangamandla (University of Zululand)

Presentation Materials