Speaker
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
InAs1-xSbx has the lowest energy band gap among all the III-V semiconductors and has thus received a great deal of attention as an important material to be incorporated into infrared optoelectronic devices. Photodetectors containing this ternary have potential to reach wavelengths up to 9 µm. To achieve this, high quality thin films with few defects and impurities are required. One of the key issues in using InAs1-xSbx in the device architecture (particularly for wavelengths greater than 4 µm) is the lack of available lattice-matched substrates. To date, the best performing InAsSb-containing devices are lattice matched to GaSb substrates, with a 9% antimony solid content. (i.e. InAs0.91Sb0.09).
This paper focuses on the deposition of high quality thin films of InAs0.91Sb0.09 (between 2 µm and 4 µm thick) on 2″ GaSb substrate. The material deposition is performed in a metal organic chemical vapour deposition (MOCVD) system. The process begins by the deposition of a thin (nanometer thickness range) low temperature buffer layer of either GaSb followed by the deposition of strain free InAsSb. High resolution X-ray diffraction (HRXRD) is used to precisely determine the composition of the ternary alloy as well as to investigate the uniformity across the entire wafer. Photoluminescence (PL), using a Fourier-transform infrared (FTIR) spectrometer, is employed to further explore the material quality and purity. Preliminary measurements indicate consistent thickness and compositional uniformity of the InAsSb layers.
Apply to be<br> considered for a student <br> award (Yes / No)?
No
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
Yes
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Main supervisor (name and email)<br>and his / her institution
Prof JR Botha
Reinhardt.Botha@nmmu.ac.za
NMMU
