9-13 July 2012
Influence of working atmosphere on Y3(Al,Ga)5O12:Tb thin films grown by PLD technique
Presented by Mr. Abdelrhman MOHMMED on 10 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
Y<sub>3</sub>(Al,Ga)<sub>5</sub>O<sub>12</sub>:Tb thin films were grown on Si (100) substrates using the pulsed laser deposition technique. The influence of working atmosphere (base pressure, O<sub>2</sub>, Ar and N<sub>2</sub>) on the morphology and structure of the thin films were investigated by Atomic force microscopy (AFM) and X-ray diffraction (XRD) respectively. Auger electron spectroscopy (AES) was employed to analyze the surface chemical composition of the films and the Auger data confirmed the presence of all major elements, namely Yttrium (Y), Aluminum (Al), Gallium (Ga) and Oxygen (O) present in Y<sub>3</sub>(Al,Ga)<sub>5</sub>O<sub>12</sub>:Tb phosphor. The brightest emission was given by the film which was deposited in oxygen atmosphere, which indicated that oxygen is the best working atmosphere for this kind of material. Depth profiles show the change in atomic concentration as well as the thickness of the thin films.
H.C Swart, firstname.lastname@example.org, University of the Free State, Department of physics