9-13 July 2012
Investigations of the Diffusion of Xenon Implanted in 6H-SiC
Presented by Ms. Thabsile THABETHE on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The diffusion behaviour of implanted xenon in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS) and channelling techniques. Xenon (Xe+) ions with an energy of 360 KeV were implanted in SiC to a fluence of 2 × 1016 cm-2 at room temperature (23°C), 350°C and 600°C. Channelling revealed that the sample (6H-SiC) at room temperature created an amorphous layer, while at 350°C it did not cause amorphisation and the crystal structure was preserved. 5h sequential isochronal annealing was performed at temperatures ranging from 1000 to 1400°C. RBS on the annealed samples showed that no diffusion of the Xe occurred in the 350°C implanted samples. In the room temperature implanted samples there was evidence of diffusion of the xenon which only started after annealing at 1200°C. The diffusion was accompanied by a loss of xenon from the SiC surface. The difference in diffusion behaviour between the room temperature implanted and the 350°C samples suggest that the Xe diffusion in the room temperature implanted samples is due to the amorphisation of the 6H-SiC and subsequent recrystallization into a polycrystalline layer after annealing.
T.T Hlatshwayo Thulani.email@example.com