Speaker
Apply to be<br> consider for a student <br> award (Yes / No)?
yes
Level for award<br> (Hons, MSc, <br> PhD)?
MSc
Main supervisor (name and email)<br>and his / her institution
T.T Hlatshwayo
Thulani.hlatshwayo@up.ac.za
Abstract content <br> (Max 300 words)
The diffusion behaviour of implanted xenon in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS) and channelling techniques. Xenon (Xe+) ions with an energy of 360 KeV were implanted in SiC to a fluence of 2 × 1016 cm-2 at room temperature (23°C), 350°C and 600°C. Channelling revealed that the sample (6H-SiC) at room temperature created an amorphous layer, while at 350°C it did not cause amorphisation and the crystal structure was preserved. 5h sequential isochronal annealing was performed at temperatures ranging from 1000 to 1400°C. RBS on the annealed samples showed that no diffusion of the Xe occurred in the 350°C implanted samples. In the room temperature implanted samples there was evidence of diffusion of the xenon which only started after annealing at 1200°C. The diffusion was accompanied by a loss of xenon from the SiC surface. The difference in diffusion behaviour between the room temperature implanted and the 350°C samples suggest that the Xe diffusion in the room temperature implanted samples is due to the amorphisation of the 6H-SiC and subsequent recrystallization into a polycrystalline layer after annealing.
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
