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SUMMARY:Electrical characterisation of defects induced in GaN by electron 
 beam exposure
DTSTART;VALUE=DATE-TIME:20160708T124000Z
DTEND;VALUE=DATE-TIME:20160708T130000Z
DTSTAMP;VALUE=DATE-TIME:20261015T105150Z
UID:indico-contribution-5767@events.saip.org.za
DESCRIPTION:Speakers: Phuti Ngoepe (University of Pretoria)\nhttps://event
 s.saip.org.za/event/86/contributions/5767/
LOCATION:Kramer Law building LT1
URL:https://events.saip.org.za/event/86/contributions/5767/
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