Speaker
Prof.
JAPIE ENGELBRECHT
(NMMU)
Description
The concentration of any dopant in a semiconductor can usually easily and readily be established using the plasma resonance minimum. Infrared reflectance spectroscopy was used to assess the doping of SiC wafers by phosphor implantation. However, results obtained did not match the theoretical predictions. The problem was investigated, including an assessment of the applicable theory. Results will be presented and discussed.
| Consider for a student <br> award (Yes / No)? | No |
|---|---|
| Level (Hons, MSc, <br> PhD, other)? | other |
| Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)? | No |
Primary author
Prof.
JAPIE ENGELBRECHT
(NMMU)
Co-author
Dr
Isabel IJ van Rooyen
(CSIR-NLC)
