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SUMMARY:Electrical and surface morphological studies of palladium and ruth
 enium Schottky diodes on n-Ge (100)
DTSTART;VALUE=DATE-TIME:20110713T150000Z
DTEND;VALUE=DATE-TIME:20110713T170000Z
DTSTAMP;VALUE=DATE-TIME:20260606T224756Z
UID:indico-contribution-5094@events.saip.org.za
DESCRIPTION:Speakers: Albert Chawanda (University of Pretoria)\nPalladium 
 (Pd) and ruthenium (Ru) Schottky barrier diodes were fabricated on (100) S
 b-doped n-type germanium using resistive evaporation and electron beam dep
 osition systems\, respectively. Electrical characterization of these diode
 s using current-voltage (I-V) measurements was performed under various ann
 ealing conditions. The morphological evolution of the surface was analysed
  using the scanning electron microscopy. The variation of the electrical a
 nd structural properties of these Schottky diodes can be attributed to com
 bined effects of interfacial reaction and phase transformation during the 
 annealing process. Thermal stability of both the Pd/n-Ge (100) and Ru/n-Ge
  (100) Schottky diodes is maintained up to annealing temperature of 550°C
 . Results have also indicated that the onset temperature for agglomeration
  in Pd/n-Ge (100) system occurs between 500 – 600°C\, and in Ru/n-Ge (1
 00) system occurs between 600 – 700°C.\n\nhttps://events.saip.org.za/ev
 ent/7/contributions/5094/
LOCATION: Asteria
URL:https://events.saip.org.za/event/7/contributions/5094/
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