In order to investigate the diffusion of indium (In) when an In thin film is coated with a copper (Cu) thin film, thin In/Cu films were grown on a silicon dioxide (SiO2) substrate. Both the In and the Cu layers were grown by electron beam evaporation. The temperature during evaporation of the films ranged between 27 and 38 oC. The In films (500 Å) were coated with Cu films (500 Å and 1000 Å). The films were characterized with X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The In/Cu layers interdiffused during evaporation and formed intermetallic CuIn2 and Cu11In9 phases. The In layer completely reacted with the Cu layers during the deposition process. The In layer was effectively coated with a Cu layer (1000 Å). The In (500 Å)/Cu (1000 Å) films were annealed at temperatures ranging between 150 and 300 oC for times varying between 25 and 121 min. For annealed films the diffraction data demonstrated peaks only for Cu and Cu11In9 and AES depth profiles pointed out the stability of the Cu11In9 and In diffusion to the surface of the film. The results of this work provide insight towards the In doping of Cu crystals at temperatures higher than the melting point of In (156.6 oC).
|Level (Hons, MSc, <br> PhD, other)?||Msc|
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