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SUMMARY:Electrical characterization of irradiated n-GaN
DTSTART;VALUE=DATE-TIME:20110713T150000Z
DTEND;VALUE=DATE-TIME:20110713T170000Z
DTSTAMP;VALUE=DATE-TIME:20260811T054415Z
UID:indico-contribution-4994@events.saip.org.za
DESCRIPTION:Speakers: Maisela Morongwa (University of Pretoria)\nWe invest
 igate the electrical parameters of n- GaN irradiated at room temperature w
 ith 5.4 MeV alpha-particles from an americium-241 (Am-241) radio-nuclide s
 ource under dark conditions. The radiation damage was studied using curren
 t–voltage (I–V) and capacitance –voltage (C–V) characteristics for
  a total irradiation time of 14 hours at a dose rate of   and the correspo
 nding dose range of  . Diode parameters such as the Schottky barrier heigh
 t\, ideality factor\, saturation current\, free carrier concentration and 
 reverse leakage current were monitored from the I–V and C–V measuremen
 ts that were recorded by a computer programme developed using National Ins
 trument’s LabView software. The irradiation results reveal an increase i
 n the ideality factor\, series resistance\, saturation current and reverse
  leakage current over the dose range investigated. The free carrier densit
 y and the Schottky barrier height were found to decrease with increasing d
 ose. Our results suggest that the observed effects are as a result of the 
 radiation damage to our sample.\n\nhttps://events.saip.org.za/event/7/cont
 ributions/4994/
LOCATION: Asteria
URL:https://events.saip.org.za/event/7/contributions/4994/
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