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SUMMARY:Schottky contact on GaN
DTSTART;VALUE=DATE-TIME:20110714T150000Z
DTEND;VALUE=DATE-TIME:20110714T170000Z
DTSTAMP;VALUE=DATE-TIME:20260715T043726Z
UID:indico-contribution-4990@events.saip.org.za
DESCRIPTION:Speakers: Mmantsae Diale (University of Pretoria)\nMetal Au\, 
 Ni and Ni/Au contacts on n-GaN were studied for metal contacts for the fab
 rication of Shottky barrier ultraviolet photodetectors. AES\, RBS and curr
 ent-voltage measurements were used to study the samples. Figure 2 shows th
 e current voltage mechanism of Au\, Ni and Ni/Au transparent contacts onto
  GaN. The Schottky barrier heights of Au contacts were averaged at 0.84 ±
  0.02 eV and the ideality factors of 1.7 ± 0.3. Series resistance for the
 se contacts was about 481 ± 4 Ω. Ni contacts onto GaN are dominated by t
 unneling currents and the leakage current is higher than that of Au. The S
 chottky barrier heights of Ni contacts were averaged at 0.82 ± 0.04 eV an
 d the ideality factors of 1.9 ± 0.2. Series resistance for these contacts
  was about 38 ± 1 Ω\, far less than that of Au contacts. Ni/Au contacts 
 are annealed at 500 °C for transparency. The leakage current of Ni/Au is 
 two orders of magnitude lower than that of Ni and Au\, and the Schottky ba
 rrier height was averaged at 2.04 ± 0.01 eV for ideality factors of about
  1.6 ± 0.4.\n\nhttps://events.saip.org.za/event/7/contributions/4990/
LOCATION: Asteria
URL:https://events.saip.org.za/event/7/contributions/4990/
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