The interaction of Pd and SiC samples during thermal annealing were investigated using x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) as well as Scanning Electron Microscopy (SEM). Two sample configuration were used (1) the palladium (50nm) was deposited onto a degreased 6H-SiC substrate and (2) palladium ions were implanted into the 6H-SiC substrate at room temperature and at 200°C with a fluency of 1 x 1015cm-2. Both sets of the samples were annealed between temperatures of 200°C-800°C for a period of 60 min. The study showed that the thermally annealed Pd on SiC showed no detectable reaction after annealing at 200°C-400°C. At 500°C the RBS spectra shows that the Pd had reacted with SiC. Using XRD it was observed that metal rich silicides Pd3Si tend to form first after annealing at 500°C followed by the formation of Pd2Si after annealing at 600°C, 700°C and 800°C. No Carbon compounds were detected by XRD in these annealing temperature ranges. The implanted samples showed no detectable phase formation after annealing at temperature ranges of 200°C-800°C for a period of 60 min and at 1000°C for 10 hours. The RBS / Channeling results for the implanted samples are also shown.
|Level (Hons, MSc, <br> PhD, other)?||MSc|
|Consider for a student <br> award (Yes / No)?||No|
|Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?||No|