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SUMMARY:Electrical Activity of Aluminum-\, Boron-\, and n-Type Impurity–
 Defect Complexes in Germanium: Implications for Enhanced Ge-Based Devices
DTSTART;VALUE=DATE-TIME:20260609T191000Z
DTEND;VALUE=DATE-TIME:20260609T193000Z
DTSTAMP;VALUE=DATE-TIME:20260606T094236Z
UID:indico-contribution-10359@events.saip.org.za
DESCRIPTION:Speakers: Emmanuel Igumbor (University of Johannesburg)\nStudi
 es on point defects in germanium (Ge) are increasing\, primarily because t
 hese defects have the potential to modify the electronic and optical prope
 rties of Ge\, thereby enhancing device applications. While significant pro
 gress has been made in defect studies\, a comprehensive understanding of d
 efect complexes resulting from interactions between type (Al or B) and p-t
 ype atoms (D_GeX_i and DX\; where D = Al\, B\, and X = N\, P\, As\, Sb) is
  still lacking. Therefore density functional theory calculations of electr
 ically active defect levels in Ge that are caused by interactions between 
 n-type impurity atoms and Al or B\, are presented. For defect-complexes fo
 rmed by Al and n-type atoms\, Al and P exhibit the highest formation stabi
 lity under equilibrium conditions. Conversely\, B_GeP_i represents the mos
 t energetically favorable defect-complex. With the exception of B_GeN_i\, 
 the energetic stability of all defect-complexes suggests that Al and B int
 erstitials form strong bonds with n-type substitutional atoms. Electrical 
 behavior analyses of these defects reveal that defect-complexes formed by 
 Al and n-type atoms induce deep defect levels. Specifically\, Al_GeN_i act
 s as an acceptor\, while Al_iAs_Ge behaves as a donor. The defects B_GeSb_
 i\, B_iP_Ge\, and B_iAs_Ge donate electrons to the conduction band at ener
 gy levels within the range of 3 KbT. Furthermore\, B_GeSb_i induces shallo
 w donor levels\, whereas B_GeP_i induces acceptor levels. This study opens
  new research opportunities in the experimental synthesis of defects and o
 ffers insights into controlling them\, potentially enhancing electronic de
 vices.\n\nhttps://events.saip.org.za/event/274/contributions/10359/
LOCATION:
URL:https://events.saip.org.za/event/274/contributions/10359/
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