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SUMMARY:Optimization of processing parameters of dip coated CuO films for 
 photoelectrochemical water-splitting
DTSTART;VALUE=DATE-TIME:20210727T140000Z
DTEND;VALUE=DATE-TIME:20210727T141500Z
DTSTAMP;VALUE=DATE-TIME:20260615T104306Z
UID:indico-contribution-7224@events.saip.org.za
DESCRIPTION:Speakers: Mano Mosalakgotla ()\nAbstract.\n\nIn this work\, th
 in films of dip coated CuO nanoparticles were prepared on fluorine-doped t
 in oxide (FTO) substrates and the film’s processing parameters which inc
 ludes the withdrawal rate\, film thickness and annealing temperature were 
 optimized for photoelectrochemical (PEC) water splitting. CuO films were p
 repared at withdrawal speeds ranging from 50-200 mm/min\, with thicknesses
  of 158-627 nm and annealed at 400-650 °C for 1 hr. X-ray diffraction (XR
 D) and Raman spectroscopy studies confirmed the preparation of crystallize
 d CuO films of high purity. The estimated crystal sizes  for the films inc
 reases with withdrawal rate and annealing temperature\, producing the high
 est value for films withdrawn and annealed at 150 mm/min and 600°C respec
 tively.  The  CuO films indicated strong optical absorptions in the visibl
 e region and their absorbance increases with increasing film thickness. Th
 e band gaps of all samples ranged from 1.69 to 2.08 eV. Linear Sweep Volta
 mmetry (LSV) measurements yielded the highest photocurrent densities of 2\
 , 2.6 and 2.9 mA/cm2 at 0.37 V vs RHE for films prepared at withdrawal spe
 ed of 150 mm/min\, deposited with 7 layers and annealed at 600°C.  The hi
 gh photocurrent obtained for the films was due to the optimized film thick
 ness\, enhanced crystallization and the decrease in charge transfer resist
 ance at solid/liquid interface achieved for the films. The least photocurr
 ent was observed for films annealed at 400°C due to poor crystallization 
 and  high charge transfer resistance obtained. This study emphasized the i
 mportance of optimizing processing parameters such as  withdrawal speed\, 
 film thickness and annealing temperature in the preparation of CuO films f
 or photocatalytic applications. \n\n\nKeywords: CuO photocathodes\, PEC wa
 ter-splitting\, withdrawal speed\, film thickness\, annealing temperature.
 \n\nhttps://events.saip.org.za/event/206/contributions/7224/
LOCATION:North-West University Potchefstroom Campus
URL:https://events.saip.org.za/event/206/contributions/7224/
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