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SUMMARY:The study of amorphous GaAs following Ar+ and Si+ implantation
DTSTART;VALUE=DATE-TIME:20210727T101500Z
DTEND;VALUE=DATE-TIME:20210727T103000Z
DTSTAMP;VALUE=DATE-TIME:20260813T023540Z
UID:indico-contribution-7078@events.saip.org.za
DESCRIPTION:Speakers: Ongeziwe Mpatani (Wits School of Physics)\nIon impla
 ntation is a technique of choice for inducing disorder in semiconducting m
 aterials such as crystalline GaAs. Interestingly\, the properties of these
  amorphous materials such as the medium-range order (MRO) and small range 
 order (SRO) depend heavily on the material of interest and its implantatio
 n conditions. Understanding the crystalline to amorphous phase transformat
 ions is vital for the continued use of GaAs in optoelectronic applications
 . In the present work\, the configuration of the disordered layer in GaAs 
 is generated using Ar$^+$ and Si$^+$ ions at different energies and differ
 ent fluences\, and the elastic properties are investigated. Raman spectros
 copy was used to determine the structural configurations and phonon confin
 ement of the damage layers after ion implantation. The crystal structure a
 nd the physical properties were determined using GIXRD and XRR for phonon 
 dispersion simulations. The dynamics of acoustic propagation of the disord
 ered layer are investigated using surface Brillouin scattering in the back
 scattering geometry. The derived phonon dispersion curves are fitted using
  surface elastodynamic Green's function to yield the elastic constants of 
 the disordered layers on (001) GaAs substrate.\n\nhttps://events.saip.org.
 za/event/206/contributions/7078/
LOCATION:North-West University Potchefstroom Campus
URL:https://events.saip.org.za/event/206/contributions/7078/
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