Speaker
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
Yes
Main supervisor (name and email)<br>and his / her institution
M Diale, PhD. University of Pretoria, Physics Department.
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Apply to be<br> considered for a student <br> award (Yes / No)?
No
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
Aluminium (Al) doped Zinc oxide (ZnO), AZO, of different Al atomic percentages was prepared by a sol-gel method and deposited on microscope glass plates (SiO2) and a-Si/SiO2 substrates. Resistivity and Hall measurements were conducted on the samples. Palladium (Pd) contacts were deposited on the AZO nanoparticles by resistive evaporation. Current–voltage (I–V) and capacitance–voltage (C–V) measurements were performed on Pd /ZnO nanoparticles Schottky contacts at room temperature (RT) and in the range 60–300 K. The ideality factor (n), barrier height (ΦB) and carrier concentrations (ND) were calculated from the forward bias characteristics. Using temperature dependent I—V characteristics, the barrier height was observed to increase with increasing temperature. The C–V barrier height decreases with temperature increase.
