Microstructure evolution of rutheniumwith 6H-SiC interface under vacuum annealing and the implications for the performance of its Schottky contact for high temperature operating diodes.
Presented by Mr. Kinnock Vundawaka MUNTHALI on 8 Jul 2014 from 15:20 to 15:40
Type: Oral Presentation
Track: Track F - Applied Physics
Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800C,while diffusion of Ru into 6H-SiC commenced at 800C. Raman analysis of the thin films annealed at 1000C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.
Prof. Chris Theron,Department of Physics, University of Pretoria, Email: email@example.com