10-14 July 2016
Africa/Johannesburg timezone
Paper Submission is Open!! Registration for CCP2016 Conference will be open at the registration desk @ St. George's Hotel reception area on Sunday 10 July / Welcome Dinner at 18:30 SAST.

Effect of Mo alloying elements on Ni silicides formation

13 Jul 2016, 12:35
20m
Oral Presentation Parallel Track B

Speaker

Dr Achour DERAFA (Laboratoire LP3M, Département de Physique, Faculté des séances, Université de Sétif-1, Sétif 19000, Algérie)

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Abstract
A small amount of Mo as alloying element with Ni thin film on Si(100) substrate can greatly enhanced the thermal stability of nickel monosilicide formed by rapid thermal annealing (RTA). The study was carried out using X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectrometry (RBS), Scanning Electronic Microscopy (SEM), Energy Dispersive X-ray (EDX) and four probe sheet Resistance (Rs). One possible reason for the enhanced NiSi thermal stability is attributed to the presence of Mo alloying element at the grain boundaries and interfaces of NiSi film, leading to the increase in the interfacial energy change. The increase of the activation energy for the NiSi2 nucleation and the thermal stability of NiSi compound are studied.

Keywords: alloying elements, NiSi stability, XRD, Raman spectroscopy, RBS, SEM, EDX, Rs.

Primary author

Dr Achour DERAFA (Laboratoire LP3M, Département de Physique, Faculté des séances, Université de Sétif-1, Sétif 19000, Algérie)

Co-authors

Prof. Abderrahmane Bouabellou (Laboratoire Couches Minces et Interface, Université Mentouri Constantine-1, Constantine 25000, Algérie.) Dr Charaf-eddine Sedrati (Laboratoire Couches Minces et Interface, Université Mentouri Constantine-1, Constantine 25000, Algérie.) Prof. Dominique Mangelinck (IM2NP, UMR CNRS 6242 Université Aix-Marseille, France.)

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