12-15 July 2011
Saint George Hotel
Africa/Johannesburg timezone
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Non-resonant microwave absorption in FeSi thin films

Presented by Mr. Happison GAVI on 13 Jul 2011 from 17:00 to 19:00
Type: Poster Presentation
Session: Poster1
Track: Track A - Condensed Matter Physics and Material Science


<p>Non-resonant microwave absorption measurements at 9.4 GHz(X-band)using electron spin resonance spectrometer (ESR), were carried out on pulsed laser deposited(PLD)polycrystalline FeSi thin films grown on Si(111)substrate. The low-field microwave absorption(LFA)properties of the films were investigated as a function of DC modulation field, temperature, microwave power and angle. The DC field and AC field were orientated parallel to the film surface. The DC field was orientated normal to the AC field. The anisotropy field was observed to have a central influence on the LFA shape on all the measurements made, which makes LFA very similar to giant magneto-impedance(GMI). Thin films of FeSi could be potential candidates for magnetic field sensors(based on their GMI). Magnetic anisotropy could be a signature of ferromagnetic state of a material and hence thin films of FeSi are promising candidates for Spintronics applications.

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Room: Asteria

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